Principal Medium Voltage Power MOSFET Design Engineer
Location
Takasaki, Japan
Job Type
Full-time
Category
other-general
Posted
June 15, 2026
Principal Medium Voltage Power MOSFET Design Engineer
Job Description
**Job Summary:**
We are looking for a highly motivated and skilled engineer to join our Medium Voltage (MV) Power Trench MOSFET Design Team. The successful candidate will play a key role in the design and development of next-generation MV shielded-gate trench MOSFET technologies. This role involves close collaboration with process integration team, application team , marketing team and external foundry partners to drive innovation, optimize performance, and accelerate product industrialization.
**Key Responsibilities:**
+ Define and establish key process modules for next-generation MV shielded-gate trench MOSFET technology
+ Develop TCAD simulation decks and propose advanced device design concepts
+ Analyze wafer-level electrical test results and package-level performance data for each development iteration
+ Lead yield improvement activities and support technology tran...
Job Description
**Job Summary:**
We are looking for a highly motivated and skilled engineer to join our Medium Voltage (MV) Power Trench MOSFET Design Team. The successful candidate will play a key role in the design and development of next-generation MV shielded-gate trench MOSFET technologies. This role involves close collaboration with process integration team, application team , marketing team and external foundry partners to drive innovation, optimize performance, and accelerate product industrialization.
**Key Responsibilities:**
+ Define and establish key process modules for next-generation MV shielded-gate trench MOSFET technology
+ Develop TCAD simulation decks and propose advanced device design concepts
+ Analyze wafer-level electrical test results and package-level performance data for each development iteration
+ Lead yield improvement activities and support technology tran...