Principal Medium Voltage Power MOSFET Design Engineer

Renesas Electronics • Takasaki, Gunma Prefecture, Japan • Posted June 09, 2026

Location Takasaki, Gunma Prefecture

Job Type Full-time

Category Engineers

Posted June 09, 2026

Job Description
Job Summary:
We are looking for a highly motivated and skilled engineer to join our Medium Voltage (MV) Power Trench MOSFET Design Team. The successful candidate will play a key role in the design and development of next-generation MV shielded-gate trench MOSFET technologies. This role involves close collaboration with process integration team, application team , marketing team and external foundry partners to drive innovation, optimize performance, and accelerate product industrialization.
Key Responsibilities:
Define and establish key process modules for next-generation MV shielded-gate trench MOSFET technology
Develop TCAD simulation decks and propose advanced device design concepts
Analyze wafer-level electrical test results and package-level performance data for each development iteration
Lead yield improvement activities and support technology transfer to mass production
Contribute to the d...
            

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